The Data EEPROM is a high-endurance, byte addressable array that has been optimized for the storage of frequently changing information (e.g., program variables or other data that are updated often). Frequently changing values will typically be updated more often than specifications D120 or D120A. If this is not the case, an array refresh must be performed. For this reason, variables that change infrequently (such as constants, IDs, calibration, etc.) should be stored in FLASH program memory. 数据 EEPROM 是高耐久性、针对频繁变动信息(例如, 程序变量或其它经常更新的数据)的存储而优化的字节 寻址存储器阵列。通常,频繁变动值的更新频率应超过 D120或D120A中规定的参数值。如果并非如此,则必须 进行存储阵列刷新。为此,不经常变动的变量(如常 数、ID、校准值等)应存放在闪存程序存储器中。